The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Mar. 04, 2011
Applicants:

Kyouichi Kashima, Ota, JP;

Yoshitaka Fukushima, Mizuho, JP;

Masahiro Ono, Isesaki, JP;

Tetsuro Hirano, Ora-gun, JP;

Inventors:

Kyouichi Kashima, Ota, JP;

Yoshitaka Fukushima, Mizuho, JP;

Masahiro Ono, Isesaki, JP;

Tetsuro Hirano, Ora-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01); H02H 7/00 (2006.01); H02J 7/00 (2006.01); H02H 9/00 (2006.01); H02H 3/20 (2006.01); H02H 9/04 (2006.01); H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
H02J 7/0016 (2013.01);
Abstract

A circuit device connected between a neighboring pair of terminals in a semiconductor integrated circuit is protected from electrostatic damage due to a surge voltage when the surge voltage is applied between the neighboring pair of terminals. The semiconductor integrated circuit is formed to include terminals P-P, MOS transistors MN-MNin diode connection, protection diode circuits HD-HD, MOS transistors T-Tfor discharging electricity from batteries, a battery voltage detection control circuit and a clamp circuit for overvoltage protection. Each of the MOS transistors T-Tfor discharging electricity from the batteries is connected between each neighboring pair of the terminals P-Pthrough wirings. Each of the MOS transistors MN-MNin diode connection is connected between each neighboring pair of the terminals.


Find Patent Forward Citations

Loading…