The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Sep. 30, 2014
Applicant:

Gwangju Institute of Science and Technology, Gwangju, KR;

Inventors:

Seong-Ju Park, Gwangju, KR;

Jae-Joon Kim, Gwangju, KR;

Youngchul Leem, Gwangju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/58 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/46 (2013.01); H01L 33/58 (2013.01);
Abstract

Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.


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