The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Dec. 06, 2011
Jun Ho Yun, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Chang Youn Kim, Ansan-si, KR;
Hong Jae Yoo, Ansan-si, KR;
Sung Hoon Hong, Ansan-si, KR;
Jun Ho Yun, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Chang Youn Kim, Ansan-si, KR;
Hong Jae Yoo, Ansan-si, KR;
Sung Hoon Hong, Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×10/cmand a thickness in the range of 5 to 10 um.