The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Aug. 25, 2014
Applicant:
3m Innovative Properties Company, St. Paul, MN (US);
Inventors:
Jun-Ying Zhang, Perrysburg, OH (US);
Michael A. Haase, St. Paul, MN (US);
Todd A. Ballen, St. Paul, MN (US);
Terry L. Smith, Roseville, MN (US);
Assignee:
3M INNOVATIVE PROPERTIES COMPANY, St. Paul, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); B82Y 20/00 (2011.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); H01L 21/46 (2006.01); H01L 33/28 (2010.01); H01L 33/46 (2010.01); H01L 21/306 (2006.01); H01S 5/183 (2006.01); H01S 5/347 (2006.01); G02B 6/44 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); B82Y 20/00 (2013.01); C23C 14/021 (2013.01); C23C 14/0652 (2013.01); C23C 16/0227 (2013.01); C23C 16/345 (2013.01); H01L 21/30604 (2013.01); H01L 21/46 (2013.01); H01L 33/28 (2013.01); H01L 33/46 (2013.01); G02B 6/4439 (2013.01); H01S 5/18369 (2013.01); H01S 5/347 (2013.01);
Abstract
Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a SiNlayer disposed directly on the II-VI semiconductor layer.