The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Feb. 04, 2010
Eishi Tsutsumi, Kawasaki, JP;
Kumi Masunaga, Kawasaki, JP;
Ryota Kitagawa, Tokyo, JP;
Tsutomu Nakanishi, Tokyo, JP;
Akira Fujimoto, Kawasaki, JP;
Hideyuki Nishizawa, Tokyo, JP;
Koji Asakawa, Kawasaki, JP;
Eishi Tsutsumi, Kawasaki, JP;
Kumi Masunaga, Kawasaki, JP;
Ryota Kitagawa, Tokyo, JP;
Tsutomu Nakanishi, Tokyo, JP;
Akira Fujimoto, Kawasaki, JP;
Hideyuki Nishizawa, Tokyo, JP;
Koji Asakawa, Kawasaki, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nmto 0.8 μm, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.