The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Feb. 21, 2012
Bruce W. Wessels, Wilmette, IL (US);
Nikhil Rangaraju, Elk Grove, IL (US);
John A. Peters, Skokie, IL (US);
Bruce W. Wessels, Wilmette, IL (US);
Nikhil Rangaraju, Elk Grove, IL (US);
John A. Peters, Skokie, IL (US);
NORTHWESTERN UNIVERSITY, Evanston, IL (US);
Abstract
In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (MJT), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity. The second non-magnetic semiconductor layer is disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer. The magnetic semiconductor layer has majority charge carriers of the first polarity, and is disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer.