The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
May. 30, 2013
Electronics and Telecommunications Research Institute, Daejeon, KR;
Sang Choon Ko, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Byoung-Gue Min, Daejeon, KR;
Young Rak Park, Daejeon, KR;
Hokyun Ahn, Daejeon, KR;
Jeong-Jin Kim, Jeollabuk-do, KR;
Eun Soo Nam, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
A method of manufacturing a semiconductor device includes forming devices including source, drain and gate electrodes on a front surface of a substrate including a bulk silicon, a buried oxide layer, an active silicon, a gallium nitride layer, and an aluminum-gallium nitride layer sequentially stacked, etching a back surface of the substrate to form a via-hole penetrating the substrate and exposing a bottom surface of the source electrode, conformally forming a ground interconnection on the back surface of the substrate having the via-hole, forming a protecting layer on the front surface of the substrate, and cutting the substrate to separate the devices from each other.