The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jan. 31, 2012
Applicant:
Masao Okihara, Tokyo, JP;
Inventor:
Masao Okihara, Tokyo, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 21/76254 (2013.01); H01L 21/76283 (2013.01); H01L 29/66772 (2013.01); H01L 27/1203 (2013.01); H01L 29/785 (2013.01); H01L 29/78621 (2013.01);
Abstract
An SOI substrate includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.
Okihara, Masao. (2015). Soi substrate, method of manufacturing the soi substrate, semiconductor device, and method of manufacturing the semiconductor device (U.S. Patent No. 9136386). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9136386
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile