The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 15, 2011
Keiji Okumura, Kyoto, JP;
Mineo Miura, Kyoto, JP;
Katsuhisa Nagao, Kyoto, JP;
Shuhei Mitani, Kyoto, JP;
Keiji Okumura, Kyoto, JP;
Mineo Miura, Kyoto, JP;
Katsuhisa Nagao, Kyoto, JP;
Shuhei Mitani, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion.