The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Aug. 29, 2011
Applicants:

Chengming He, Shenzhen, CN;

Fengju Liu, Shenzhen, CN;

Inventors:

Chengming He, Shenzhen, CN;

Fengju Liu, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/322 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66765 (2013.01); H01L 27/1259 (2013.01);
Abstract

The present invention provides methods for manufacturing a passivation layer and a thin film transistor (TFT) array substrate. The method for manufacturing the passivation layer comprises the following steps: placing a substrate in a vacuum process chamber; providing an ammonia gas and a nitrogen gas into the vacuum process chamber; forming plasma and evaporating water vapor; and forming the passivation layer on the substrate. The method for manufacturing the passivation layer can be applicable to the method for manufacturing the TFT array substrate. The present invention can enhance the quality of the passivation layer.


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