The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jul. 23, 2012
Katsuhiko Takeuchi, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Katsuhiko Takeuchi, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; a gate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.