The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jul. 22, 2013
Globalfoundries Inc., Grand Cayman, KY;
Yanxiang Liu, Glenville, NY (US);
Johannes M. van Meer, Newburgh, NY (US);
Xiaodong Yang, Hopewell Junction, NY (US);
Manfred J. Eller, Beacon, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide. The HYM liner is disposed adjacent to source-drain regions, and serves to reduce stress relaxation within the shallow trench isolation (STI) oxide, which has a relatively low Young's modulus and is soft. Hence, the HYM liner serves to increase the desired stress imparted by the embedded stressor source-drain regions, which enhances carrier mobility, thus increasing semiconductor performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile