The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 23, 2010
Applicant:
Tsutomu Tanaka, Kanagawa, JP;
Inventor:
Tsutomu Tanaka, Kanagawa, JP;
Assignee:
SONY CORPORATION, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); G01T 1/24 (2006.01); H01L 27/146 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14632 (2013.01); G01T 1/24 (2013.01); H01L 25/167 (2013.01); H01L 27/146 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 27/14658 (2013.01); H01L 27/14663 (2013.01); H01L 31/105 (2013.01); H01L 27/14687 (2013.01);
Abstract
A photodiode includes a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type that is opposite to the first conductivity type of the first semiconductor layer, and a third semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer. An edge of the first semiconductor layer is inset from an edge of the second semiconductor layer.