The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 13, 2013
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Deung Kak Yoo, Icheon-si, KR;
Assignee:
SK HYNIX INC., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor device includes at least one channel layer, insulating layers stacked on top of one another while surrounding the at least one channel layer, first grooves and second grooves alternately interposed between the insulating layers, wherein the first groves have a greater width than the second grooves having a second width, and conductive layers formed in the first grooves.