The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Nov. 03, 2014
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Xinpeng Wang, Shanghai, CN;
Weihai Bu, Shanghai, CN;
Abstract
Semiconductor devices and fabrication methods are provided. First metal layers are provided in a substrate including a first region and a second region. An interlayer dielectric (ILD) layer formed over the substrate includes a top surface in the second region coplanar with a bottom of a trench in the ILD layer in the first region. Through-holes are formed in the ILD layer. A polymer layer fills the through-holes and the trench in ILD layer and covers top surface of ILD layer in both regions. The polymer layer is exposed and developed to form vias, each including an upper via in the polymer layer and a lower via in ILD layer. A second metal layer is formed to fill each via on a corresponding first metal layer in both regions. The polymer layer between adjacent second metal layers is removed to form air gaps in the second region.