The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 14, 2012
Applicants:
Sukkoo Jung, Seoul, KR;
Younghak Chang, Seoul, KR;
Hyunggu Kim, Seoul, KR;
Kyuhyun Bang, Seoul, KR;
Inventors:
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 21/8258 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0265 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/8258 (2013.01); H01L 33/007 (2013.01); H01L 33/02 (2013.01); H01L 33/20 (2013.01);
Abstract
Disclosed are a non-polar hetero substrate, a method for manufacturing the same, and a nitride-based light emitting device using the same. The non-polar hetero substrate includes a non-polar base substrate, a nitride base layer disposed on the substrate, a defect reduction layer disposed on the nitride base layer, the defect reduction layer including a plurality of air gaps, and a nitride semiconductor layer disposed on the defect reduction layer.