The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Feb. 21, 2013
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Hari M. Rao, San Diego, CA (US);

Jung Pill Kim, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G06F 17/50 (2006.01); G11C 8/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); G06F 17/50 (2013.01); G11C 8/16 (2013.01); G11C 11/1653 (2013.01); G11C 13/003 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract

A particular method of accessing a multi-port non-volatile memory device includes executing a first memory operation with respect to a first memory cell while executing a second memory operation with respect to a second memory cell. The first memory operation is via a first port and the second memory operation is via a second port. The first memory cell includes a first non-volatile memory that includes a first resistive memory structure. The second memory cell includes a second non-volatile memory that includes a second resistive memory structure. The first memory cell and the second memory cell are each accessible via the first port and the second port.


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