The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Aug. 31, 2012
Applicants:
Byung IN Lee, Hwaseong-si, KR;
Byeong IL Han, Busan, KR;
Inventors:
Byung In Lee, Hwaseong-si, KR;
Byeong Il Han, Busan, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/06 (2006.01); G11C 7/12 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01);
Abstract
A semiconductor memory device is operated by, inter alia, selecting an even bit line or an odd bit line in response to a read command, and precharging the selected bit line by applying a precharge voltage to the selected bit line; changing potential of the selected bit line in response to a threshold voltage of a selected memory cell coupled to the selected bit line; precharging a non-selected bit line by applying a precharge voltage to the non-selected bit line; and sensing read data in accordance with the potential of the selected bit line.