The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 19, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Myung-Soo Jang, Seoul, KR;
Jae-Rim Lee, Hwaseong-si, KR;
Jong-Wha Chong, Seoul, KR;
Jae-Hwan Kim, Seoul, KR;
Byung-Gyu Ahn, Seoul, KR;
Cheol-Jon Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
To design a power supply network of a 3D semiconductor device employing through-silicon-via (TSV) technology, board wiring of each of boards of the device is determined. An initial network structure is created for the boards. A layout of power bumps and through-silicon-vias, using the initial network structure, is produced such that voltages of all nodes of wiring of the boards are greater than a reference voltage. A semiconductor device having boards, power bumps and through-silicon-vias conforming to the layout is fabricated. Thus, the numbers of the through-silicon-vias and the power bumps of the power supply network of the semiconductor device are minimal.