The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Dec. 31, 2009
Applicants:

Damian P. Yurzola, Santa Clara, CA (US);

Sergey A. Gorobets, Edinburgh, GB;

Neil D. Hutchison, Larbert, GB;

Eran Erez, San Jose, CA (US);

Inventors:

Damian P. Yurzola, Santa Clara, CA (US);

Sergey A. Gorobets, Edinburgh, GB;

Neil D. Hutchison, Larbert, GB;

Eran Erez, San Jose, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0608 (2013.01); G06F 3/0616 (2013.01); G06F 3/0641 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 2212/401 (2013.01); G06F 2212/7205 (2013.01); G06F 2212/7209 (2013.01);
Abstract

Systems and methods are disclosed to improve the performance of a memory system by freeing up physical memory areas that correspond to logical block address ranges that have repeated data patterns. A controller detects data patterns in incoming data. When a data pattern is detected, the data is not written to non-volatile storage area. Rather, the logical block address range of the data is marked in a data structure as having pattern data. The pattern may also be recorded in the data structure as a pattern descriptor. Because the data having the data pattern is not written to the non-volatile storage area, the freed up corresponding physical memory area may be utilized by the memory system for other purposes, thereby improving the overall performance and endurance of the memory system.


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