The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Dec. 12, 2013
Applicant:

Asahi Kasei Microdevices Corporation, Tokyo, JP;

Inventors:

Taisuke Fujita, Tokyo, JP;

Makoto Kataoka, Tokyo, JP;

Tatsuhiko Yayoi, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/72 (2006.01); G01R 33/00 (2006.01); G01R 33/07 (2006.01); H01L 43/06 (2006.01);
U.S. Cl.
CPC ...
G01R 33/0029 (2013.01); G01R 33/0052 (2013.01); G01R 33/0082 (2013.01); G01R 33/07 (2013.01); H01L 43/065 (2013.01);
Abstract

By restricting the concentration and the depth of an n-type impurity region which is a magnetosensitive portion of a Hall device to appropriate ranges, it is possible to improve linearity of temperature characteristics in detecting a magnetic field intensity with high accuracy. In order to obtain linearity of the temperature characteristics of the constant-current sensitivity, there is provided a Hall device including a p-type impurity regionand an n-type impurity regionthat is disposed on the p-type impurity regionand that serves as a magnetosensitive portion, wherein an n-type impurity concentration N and a distribution depth D of the n-type impurity regionsatisfy relational expressions of N<1.0×10and N>3.802×10×D.


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