The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Dec. 08, 2006
Applicants:

Daniel James Twitchen, Sunningdale, GB;

Grant Charles Summerton, Norwood, ZA;

Ian Friel, Guildford, GB;

John Olaf Hansen, Johannesburg, ZA;

Keith Barry Guy, Marlow Bottom, GB;

Michael Peter Gaukroger, Basingstoke, GB;

Philip Maurice Martineau, Littlewick Green, GB;

Robert Charles Burns, Johannesburg, ZA;

Simon Craig Lawson, Maidenhead, GB;

Timothy Patrick Gerard Addison, Midrand, ZA;

Inventors:

Daniel James Twitchen, Sunningdale, GB;

Grant Charles Summerton, Norwood, ZA;

Ian Friel, Guildford, GB;

John Olaf Hansen, Johannesburg, ZA;

Keith Barry Guy, Marlow Bottom, GB;

Michael Peter Gaukroger, Basingstoke, GB;

Philip Maurice Martineau, Littlewick Green, GB;

Robert Charles Burns, Johannesburg, ZA;

Simon Craig Lawson, Maidenhead, GB;

Timothy Patrick Gerard Addison, Midrand, ZA;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/02 (2006.01); C30B 29/04 (2006.01); C30B 25/10 (2006.01); C30B 25/00 (2006.01); C23C 16/27 (2006.01);
U.S. Cl.
CPC ...
C30B 29/04 (2013.01); C30B 25/105 (2013.01); C23C 16/27 (2013.01); C30B 25/00 (2013.01); C30B 29/02 (2013.01);
Abstract

The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterized by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.


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