The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Oct. 29, 2010
Applicants:

Musubu Ichikawa, Nagano, JP;

Naoki Hirata, Tokyo, JP;

Hisao Kono, Tokyo, JP;

Naomi Oguma, Tokyo, JP;

Inventors:

Musubu Ichikawa, Nagano, JP;

Naoki Hirata, Tokyo, JP;

Hisao Kono, Tokyo, JP;

Naomi Oguma, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); C07D 471/06 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
C07D 471/06 (2013.01); H01L 51/0053 (2013.01); H01L 51/0545 (2013.01);
Abstract

Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), Rmeans a linear or branched alkyl group having from 1 to 20 carbon atoms, Rmeans a linear or branched alkyl group having from 2 to 6 carbon atoms, Rmeans a linear or branched alkyl group having from 2 to 6 carbon atoms, Xand Xeach mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by Rand Rmay each be substituted with one or more fluorine atoms.


Find Patent Forward Citations

Loading…