The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Aug. 21, 2013
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Masafumi Mitsuishi, Kanagawa, JP;

Masayasu Komyo, Kanagawa, JP;

Souji Sunairi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01); H03K 19/094 (2006.01); H03F 3/45 (2006.01); H03F 1/52 (2006.01); H04L 25/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45179 (2013.01); H03F 1/523 (2013.01); H03F 3/45188 (2013.01); H03F 3/45632 (2013.01); H04L 25/028 (2013.01); H04L 25/0272 (2013.01);
Abstract

A highly reliable circuit is realized using the transistors having a lower withstand voltage. There are provided a differential pair including a first and a second transistor which respectively receive input signals having mutually reversed phases; a third and a fourth transistor respectively cascode-coupled to the first and the second transistor, and having the same conductivity type as the first and the second transistor; a first and a second output terminal coupled to respective drains of the third and the fourth transistor; and a voltage divider circuit which divides an intermediate potential between respective potentials of the first and the second output terminal and supplies the divided potential to gates of the third and the fourth transistor.


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