The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Oct. 20, 2011
Kai Xue MA, Singapore, SG;
Jiangmin Gu, Singapore, SG;
Yang LU, Singapore, SG;
Kiat Seng Yeo, Singapore, SG;
Kai Xue Ma, Singapore, SG;
Jiangmin Gu, Singapore, SG;
Yang Lu, Singapore, SG;
Kiat Seng Yeo, Singapore, SG;
Nanyang Technological University, Singapore, SG;
Abstract
Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class-AB, B, C, D, E and F in the different application scenarios.