The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Dec. 12, 2013
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Yang Xu, Chicago, IL (US);
Timothy Paul Pals, San Diego, CA (US);
Kevin Hsi Huai Wang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); G01S 19/21 (2010.01); H03F 1/22 (2006.01); H03F 1/32 (2006.01); H04B 7/185 (2006.01); G01S 19/34 (2010.01); G01S 19/36 (2010.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
H03F 3/04 (2013.01); G01S 19/21 (2013.01); H03F 1/223 (2013.01); H03F 1/3205 (2013.01); H04B 7/18513 (2013.01); G01S 19/34 (2013.01); G01S 19/36 (2013.01); H04B 2001/045 (2013.01);
Abstract
A device includes a low noise amplifier (LNA) for amplifying an input signal, with the LNA including a first transistor configured to receive the input signal, a second transistor configured to receive a bias current and forming a current mirror for the first transistor, and an operational amplifier (op amp) operative to generate a bias voltage for the first and second transistors to match operating points of the first and second transistors.