The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Sep. 15, 2014
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Avinash Srikrishnan Kashyap, Niskayuna, NY (US);

Emad Andarawis Andarawis, Ballston Lake, NY (US);

David Mulford Shaddock, Troy, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/332 (2006.01); H02H 1/04 (2006.01); H01L 21/50 (2006.01); H01L 29/861 (2006.01); H01L 21/82 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 27/02 (2006.01); H01L 23/00 (2006.01); H02H 3/20 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 21/8252 (2006.01);
U.S. Cl.
CPC ...
H02H 1/04 (2013.01); H01L 21/50 (2013.01); H01L 21/8213 (2013.01); H01L 24/16 (2013.01); H01L 27/0255 (2013.01); H01L 27/0605 (2013.01); H01L 27/0814 (2013.01); H01L 29/861 (2013.01); H02H 3/20 (2013.01); H01L 21/8252 (2013.01); H01L 29/0661 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/45 (2013.01);
Abstract

A high temperature electronic system includes an electronics unit configured for exposure to an environment having a temperature greater than approximately 150.0° C. The remote electronics unit includes a transient voltage suppressor (TVS) assembly coupled in operative relationship with at least some electronic components of the electronics unit. The TVS assembly includes at least one TVS device comprising at least one of a punch-through wide band-gap semiconductor TVS die and an avalanche breakdown wide band-gap semiconductor TVS die encapsulated in a flip-chip package at least partially surrounding the die, and coupled to first and second electrodes exposed to a single side of the encapsulation.


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