The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jan. 31, 2011
Applicants:
Alfred Lell, Maxhütte-Haidhof, DE;
Martin Strassburg, Donaustauf, DE;
Inventors:
Alfred Lell, Maxhütte-Haidhof, DE;
Martin Strassburg, Donaustauf, DE;
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/40 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/4043 (2013.01); H01S 5/4087 (2013.01); H01S 5/0224 (2013.01); H01S 5/0425 (2013.01); H01S 5/2059 (2013.01); H01S 5/3095 (2013.01); H01S 5/32341 (2013.01); H01S 5/405 (2013.01); H01S 2301/173 (2013.01);
Abstract
A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.