The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Apr. 11, 2012
Applicants:

Xiaozhong Zhang, Beijing, CN;

Caihua Wan, Beijing, CN;

Xili Gao, Beijing, CN;

Jimin Wang, Beijing, CN;

Lihua Wu, Beijing, CN;

Inventors:

Xiaozhong Zhang, Beijing, CN;

Caihua Wan, Beijing, CN;

Xili Gao, Beijing, CN;

Jimin Wang, Beijing, CN;

Lihua Wu, Beijing, CN;

Assignee:

Tsinghua University, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

The present invention relates to a magnetoresistance device using a semiconductor substrate and a method for manufacturing the same. The magnetoresistance device includes: a semiconductor substrate; an oxidation layer disposed on a surface of the semiconductor substrate; electrodes disposed on the oxidation layer; and at least one diode connected between at least two of the electrodes. The magnetoresistance device of the present invention has excellent performances of a high field magnetoresistance characteristic and high sensitivity at low magnetic field, and has advantages of low power consumption, simple device structure, low cost and simple manufacturing process.


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