The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Feb. 28, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Satoshi Mitsugi, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/10 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/005 (2013.01); H01L 33/10 (2013.01); H01L 33/08 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes: a stacked body and an insulative optical path control section. The stacked body includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light emitting layer are stacked along a stacking direction. The insulative optical path control section penetrates through the second semiconductor layer and the light emitting layer, has a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer. The insulative optical path control section is configured to change traveling direction of light emitted from the light emitting layer.


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