The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Aug. 05, 2011
Hiroshi Katsuno, Tokyo, JP;
Yasuo Ohba, Kanagawa-ken, JP;
Satoshi Mitsugi, Kanagawa-ken, JP;
Shinji Yamada, Tokyo, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Kei Kaneko, Kanagawa-ken, JP;
Hiroshi Katsuno, Tokyo, JP;
Yasuo Ohba, Kanagawa-ken, JP;
Satoshi Mitsugi, Kanagawa-ken, JP;
Shinji Yamada, Tokyo, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Kei Kaneko, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.