The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Aug. 17, 2011
Seok Min Hwang, Pusan, KR;
Hae Soo Ha, Suwon-si, KR;
Jae Yoon Kim, Yongin-si, KR;
Jae Ho Han, Daejeon, KR;
Seok Min Hwang, Pusan, KR;
Hae Soo Ha, Suwon-si, KR;
Jae Yoon Kim, Yongin-si, KR;
Jae Ho Han, Daejeon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.