The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Dec. 08, 2010
Suguru Noda, Kohtoh-ku, JP;
Suguru Noda, Kohtoh-ku, JP;
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi, JP;
Abstract
The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate)is prepared, and on this monocrystalline silicon substrate, an epitaxial sacrificial layeris formed. Subsequently, on this sacrificial layer, a monocrystalline silicon thin filmis rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer, whereby a monocrystalline silicon thin filmused as a photovoltaic layer of solar cells is formed.