The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

May. 12, 2014
Applicant:

Lextar Electronics Corporation, Hsinchu, TW;

Inventors:

Po-Hung Tsou, New Taipei, TW;

Tzu-Hung Chou, Zhongli, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0328 (2006.01); H01L 27/15 (2006.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/007 (2013.01); H01L 33/42 (2013.01);
Abstract

The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.


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