The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
May. 07, 2014
Hgst Netherlands B.v., Amsterdam, NL;
Patrick M. Braganca, San Jose, CA (US);
Matthew J. Carey, San Jose, CA (US);
Jeffrey R. Childress, San Jose, CA (US);
Young-suk Choi, Los Gatos, CA (US);
Jordan A. Katine, Mountain View, CA (US);
Yang Li, San Jose, CA (US);
John C. Read, San Jose, CA (US);
Neil L. Robertson, Palo Alto, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
In one embodiment, a device includes a reference layer, a free layer positioned above the reference layer, and a spacer layer positioned between the reference layer and the free layer, the spacer layer providing a gap between the reference layer and the free layer, wherein the reference layer extends beyond a rear extent of the free layer in an element height direction perpendicular to a media-facing surface of the device, and wherein a rear portion of the spacer layer that extends beyond the rear extent of the free layer has an increased resistivity in comparison with a resistivity of a rest of the spacer layer. In other embodiments, a method for forming the device is presented, along with other device structures having an extended pinned layer (EPL).