The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Apr. 09, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
JaeHoo Park, Hwaseong-si, KR;
Daewon Ha, Seoul, KR;
Uihui Kwon, Hwaseong-si, KR;
Sung-Dae Suk, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66795 (2013.01); H01L 27/092 (2013.01); H01L 29/7853 (2013.01);
Abstract
Provided are a semiconductor device and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an active fin on a substrate; oxidizing a portion of the active fin to form an insulating pattern between the active fin and the substrate; forming a first gate pattern on the substrate, wherein the first gate pattern crosses the active fin; exposing the substrate on both sides of the first gate pattern; and forming source/drain regions on the exposed substrate.