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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9130036 B1

PDFFull Text
Date of Patent:
Sep. 08, 2015

Filed:

Dec. 06, 2013

Semiconductor device and method for manufacturing same

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Tsutomu Kiyosawa, Toyama, JP;

Kazuhiro Kagawa, Toyama, JP;

Yasuyuki Yanase, Gifu, JP;

Haruyuki Sorada, Toyama, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 21/34 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 21/324 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/04 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/0475 (2013.01); H01L 21/28026 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66037 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01J 37/32091 (2013.01); H01L 21/68735 (2013.01);
Abstract

A semiconductor device includes: a substrate with an off-angle; an SiC layer provided on a principal surface of the substrate, including an n type drift region, and having a trench whose bottom is located in the drift region; and a gate electrode provided in the trench in the SiC layer. In the trench in the SiC layer, a first angle formed by at least part of a first sidewall on an off-direction side and the principal surface of the substrate is an obtuse angle, and a second angle formed by at least part of a second sidewall opposite to the first sidewall and the principal surface of the substrate is an acute angle, in a cross section parallel to a direction of a normal line to the principal surface of the substrate and a direction of a c-axis of the substrate.

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