The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Dec. 03, 2013
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Manoj Kumar, Jharkhand, IN;
Priyono Tri Sulistyanto, Yogyakarta, ID;
Chia-Hao Lee, New Taipei, TW;
Rudy Octavius Sihombing, Medan, ID;
Shang-Hui Tu, Jhubei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The invention provides a semiconductor device, including: a semiconductor device includes: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is opposite to the second conductivity type; and a drain region formed in the drift region; a trench formed in the substrate between the body and drift regions; a gate dielectric layer disposed adjacent to the trench; a liner lining the trench and adjoining with the gate dielectric layer; and a gate electrode formed over the gate dielectric layer and extending into the trench.