The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jul. 20, 2007
Atsuko Sakata, Yokohama, JP;
Jun-ichi Wada, Yokohama, JP;
Atsuko Sakata, Yokohama, JP;
Jun-ichi Wada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device comprises releasing an oxidation source included in an interlayer dielectric film having an opening portion formed on a surface thereof and being present on the surface of the interlayer dielectric film at a first substrate temperature, forming a first layer containing Ti and N to contact with at least a part of the interlayer dielectric film at a second substrate temperature lower than the first substrate temperature, wherein a Ti content in the first layer is more than 50 at % in all components, provided that oxygen and precious metals are excluded from the all components, and forming a Cu metal layer above the first layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile