The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Feb. 12, 2015
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Ju Heon Yang, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06513 (2013.01);
Abstract

A semiconductor device may include a substrate including a first surface and a second surface, a through electrode penetrating the substrate to include a protrusion that protrudes from the second surface of the substrate, and a front side bump electrically coupled to the through electrode and disposed on the first surface of the substrate. The semiconductor device may include a first passivation pattern disposed on the first surface of the substrate to substantially surround a sidewall of the front side bump and may be formed to include an uneven surface, and a second passivation pattern disposed on the second surface of the substrate to include an uneven surface. The protrusion of the through electrode may penetrate the second passivation pattern to protrude from the uneven surface of the second passivation pattern.


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