The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Nov. 18, 2010
Applicants:

Hans Hartung, Warstein, DE;

Dirk Siepe, Warstein, DE;

Inventors:

Hans Hartung, Warstein, DE;

Dirk Siepe, Warstein, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 21/00 (2006.01); H01L 23/24 (2006.01);
U.S. Cl.
CPC ...
H01L 24/40 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 23/24 (2013.01); H01L 24/29 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/0781 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 μm. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.


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