The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Jul. 15, 2014
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventor:

Min Ding, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/36 (2006.01); H01L 23/42 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/36 (2013.01); H01L 23/367 (2013.01); H01L 23/42 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/00014 (2013.01);
Abstract

A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die.


Find Patent Forward Citations

Ding, Min. (2015). Power transistor with heat dissipation and method therefore (U.S. Patent No. 9129930). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9129930

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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