The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
May. 13, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hajime Sasaki, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3245 (2013.01); H01L 22/26 (2013.01);
Abstract
A method of manufacturing a nitride semiconductor device, the nitride semiconductor device having an input terminal, a drain terminal, a gate terminal, and an output terminal, includes a burn-in step in which the nitride semiconductor device is heated while inputting an RF signal to the input terminal, applying a drain voltage to the drain terminal, and applying a gate voltage to the gate terminal. The burn-in step is continued until the nitride semiconductor device exhibits a decrease in gate current.