The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9129909 B1

Date of Patent:

Sep. 08, 2015

Filed:

Feb. 11, 2014

Method of patterning

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Katsutoshi Kobayashi, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.

Primary Examiner:

Amanda C Walke

Int. Cl.

CPC ...

G03F 7/00 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); G03F 7/004 (2006.01);

U.S. Cl.

CPC ...

H01L 21/31111 (2013.01); G03F 7/002 (2013.01); G03F 7/004 (2013.01); G03F 7/0035 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/02225 (2013.01); H01L 21/31144 (2013.01);

Abstract

In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains at least two block chains. A layer of microphase-separated structures is formed on the concave portions and the convex portions, respectively, by microphase-separating the block copolymer layer. The processing target film is formed into predetermined patterns by selectively removing the processing target film. At least a part of the block copolymer layer is used as a mask.

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