The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Sep. 25, 2012
Fujitsu Limited, Kawasaki, JP;
National Institute of Information and Communications Technology, Koganei, JP;
Akira Endoh, Machida, JP;
Issei Watanabe, Tokyo, JP;
FUJITSU LIMITED, Kawasaki, JP;
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor layer provided over a substrate; an electron transit layer contacting a top of the first semiconductor layer; and a second semiconductor layer contacting a top of the electron transit layer, wherein the electron transit layer has a dual quantum well layer having a structure where a first well layer, an intermediate barrier layer, and a second well layer are sequentially stacked, an energy of a conduction band of the intermediate barrier layer is lower than an energy of conduction band of the first semiconductor layer and the second semiconductor layer, and a ground level is generated in the first and second well layers, and a first excitation level is generated in the dual quantum well layer.