The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jan. 12, 2011
Yasushi Nakayama, Tokyo, JP;
Takayoshi Miki, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Kazuhiro Tada, Tokyo, JP;
Shiori Idaka, Tokyo, JP;
Shigeru Hasegawa, Tokyo, JP;
Takeshi Tanaka, Tokyo, JP;
Yasushi Nakayama, Tokyo, JP;
Takayoshi Miki, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Kazuhiro Tada, Tokyo, JP;
Shiori Idaka, Tokyo, JP;
Shigeru Hasegawa, Tokyo, JP;
Takeshi Tanaka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.