The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Sep. 19, 2013
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Xianmin Yi, Menlo Park, CA (US);
Paul Perez, Boise, ID (US);
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A photodiodes may be formed on a substrate such as an imager substrate. The photodiode may include first and second layers in the substrate that form a p-n junction. The first layer may have a first doping type such as p-type doping, whereas the second layer may have a second, opposite doping type such as n-type doping. A counter-doping implant region may be provided that only partially overlaps with the second layer of the photodiode. The counter-doping implant region may have an opposite doping type to the second layer and may have a dopant concentration that is less than the dopant concentration of the second layer. The counter-doping implant region may extend into a third layer of the substrate that may have the same doping type of the second layer but at a lower concentration than the counter-doping implant region.