The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Jun. 12, 2012
Applicants:

Ingyu Baek, Seoul, KR;

Sunjung Kim, Yongin-si, KR;

Inventors:

Ingyu Baek, Seoul, KR;

Sunjung Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/10 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 27/101 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 27/2472 (2013.01); H01L 27/2481 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 2213/71 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/144 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1683 (2013.01);
Abstract

Three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include first, second and third conductive lines disposed at different vertical levels to define two intersections, and two memory cells disposed at the two intersections, respectively. The first and second conductive lines may extend parallel to each other, and the third conductive line may extend to cross the first and second conductive lines. The first and second conductive lines can be alternatingly arranged along the length of third conductive line in vertical sectional view, and the third conductive line may be spaced vertically apart from the first and second conductive lines.


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