The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Oct. 03, 2011
Kei Fujii, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrateby metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425° C. or more and 525° C. or less.