The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Mar. 22, 2012
Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
Applicants:
Frédéric Allibert, Grenoble, FR;
Julie Widiez, Grenoble, FR;
Inventors:
Frédéric Allibert, Grenoble, FR;
Julie Widiez, Grenoble, FR;
Assignees:
Soitec, Bernin, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/02052 (2013.01); H01L 21/76254 (2013.01); H01L 29/04 (2013.01); H01L 29/06 (2013.01);
Abstract
The invention relates to a method for manufacturing a semiconductor on insulator type substrate for radio frequency applications, comprising the following steps in sequence: (a) provision of a silicon substrate with an electrical resistivity of more than 500 Ohm.cm, (b) formation of a polycrystalline silicon layer on the substrate, the method comprising a step between steps a) and b) to form a dielectric material layer, different from a native oxide layer, on the substrate, between 0.5 and 10 nm thick.